Unified Memory (OUM)
Ovonyx is developing a microelectronics memory technology called Ovonic Unified
Memory (OUM). This technology is originally developed by Mr. Stanford Ovshinsky
and exclusively licensed from Energy Conversion Devices (ECD) Inc. Ovonic unified
memory -- its name is derived from ''Ovshinsky'' and ''electronic''. OVM is also
known as phase change memory because it uses unique thin-film phase change material
to store information economically and with excellent solid-state memory properties.
It would be the replacement of conventional memories like Magnetic Random Access
Memory (MRAM), Ferro electric Random Access Memory (FeRAM or FRAM), Dynamic Random
Access Memory (DRAM), and Static Random Access Memory (SRAM).
allows the rewriting of CD & DVDs .CD & DVD drives read or write ovonic
material with laser , but OVM uses electric current to change the phase of the
material. The thin-film material is a phase-change chalcogenide alloy similar
to the film used to store information on commercial CD-RW and DVD-RAM optical
disks, based on proprietary technology originally developed by and exclusively
licensed from Energy Conversion Devices.
Access Memory (MRAM), a technology first developed in the 1970's, but rarely commercialized,
has attracted by the backing of I.B.M. Motorola and others. MRAM stores information
by flip flopping two layers of magnetic material in and out of alignment with
an electric current. For reading and writing data, MRAM can be as fast as a few
nanoseconds, or billionths of a second, best among the next three generation memory
candidates. And if promises to integrate easily with the industry's existing chip
manufacturing process. MRAM is built on top of silicon circuitry. The biggest
problem with MRAM is a relatively small distance, difficult to detect, between
it's ON and OFF states.
second potential successor to flash, Ferro - electric Random Access Memory (FeRAM
/ FRAM), has actually been commercially available for nearly 15 years, has attracted
by the backing of Fujitsu, Matsushita, I.B.M. and Ramtron. FRAM relies on the
polarization of what amount to tiny magnets inside certain materials like perouikite,
from basaltic rocks. FRAM memory cells do not wear out until they have been read
or written to billions of times, while MRAM and OUM would require the addition
of six to eight "masking" layers in the chip manufacturing process,
just like Flash, FRAM might require as little as two extra layers.
is based on the information storage technology developed by Mr.Ovshinsky that
allows rewriting of CD's and DVD's. While CD and DVD drives read and write ovonic
material with lasers, OUM uses electric current to change the phase of memory
cells. These cells are either in crystalline state, where electrical resistance
is low or in amorphous state, where resistance is high. OUM can be read and write
to trillionths of times making its use essentially nondestructive, unlike MRAM
or FRAM. OUM's dynamic range, difference between the electrical resistance in
the crystalline state and in the amorphous state - is wide enough to allow more
than one set of ON and OFF values in a cell, dividing it into several bits and
multiplying memory density by two, four potential even 16 times.
OUM is not as
fast as MRAM.The OUM solid-state memory has cost advantages over conventional
solid-state memories such as DRAM or Flash due to its thin-film nature, very small
active storage media, and simple device structure. OUM requires fewer steps in
an IC manufacturing process resulting in reduced cycle times, fewer defects, and
greater manufacturing flexibility.
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